Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETs at 77 K

Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETs at 77 K

Author Nicolett, A. S. Google Scholar
Martino, J. A. Google Scholar
Simoen, E. Google Scholar
Claeys, C. Google Scholar
Institution Universidade Federal de São Paulo (UNIFESP)
Fac Tecnol São Paulo
IMEC
Abstract This work studies the influence of the back gate voltage on the LDD SOI nMOSFETs series resistance at 300 K and 77 K and corresponding to two different buried oxide thicknesses. the MEDICI simulated results were used to support the analysis. It was observed that for lower buried oxide thickness the influence of the back gate bias is higher, mainly at 77 K. However, this influence becomes negligible when the back interface below the LDD region is inverted and the depletion region in the LDD reaches its maximum saturation value.
Language English
Date 1998-06-01
Published in Journal de Physique Iv. Les Ulis Cedexa: E D P Sciences, v. 8, n. P3, p. 25-28, 1998.
ISSN 1155-4339 (Sherpa/Romeo, impact factor)
Publisher E D P Sciences
Extent 25-28
Origin http://dx.doi.org/10.1051/jp4:1998306
Access rights Closed access
Type Article
Web of Science ID WOS:000074756500007
URI http://repositorio.unifesp.br/handle/11600/25909

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